Heating apparatus and semiconductor manufacturing apparatus

ABSTRACT

It is an object to provide a heating apparatus and semiconductor manufacturing apparatus which can carry out a fine heating temperature control easily. A heating apparatus for heating a semiconductor substrate placed on a support arranged in a reaction chamber of a semiconductor manufacturing apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction. A semiconductor manufacturing apparatus includes: a reaction chamber to which a reaction gas is supplied; a support arranged in the reaction chamber; and a heating apparatus which heats a semiconductor substrate placed on the support, wherein the heating apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to a heating apparatus and a semiconductormanufacturing apparatus. Particularly, the present invention relates toa heating apparatus and semiconductor manufacturing apparatus formanufacturing, for example, a silicon single crystal semiconductorsubstrate and a semiconductor substrate which an oxide film is depositedon.

(2) Description of Related Art

Silicon substrates having an epitaxial structure have often been used asstart materials for semiconductor integrated circuit elements with highintegration and high performance of the elements. The epitaxial siliconsubstrate is obtained by subjecting a silicon single crystal thin filmto vapor phase epitaxial growth on a silicon single crystal substrate.Examples of manufacturing methods thereof include a batch system and asingle wafer system. In the batch system, the number of silicon singlecrystal substrates which can be processed by one process is severalwafers to tens of wafers. In the single wafer system, the substrates areprocessed wafer by wafer.

This conventional vapor phase epitaxial growth apparatus is composed ofa reaction gas inlet for introducing reaction gas into the apparatusfrom the outside of the apparatus, a support which supports the siliconsingle crystal substrate, a transparent quartz glass plate whichsurrounds the support and forms a reaction chamber space, and a heatingapparatus for heating the support.

When the support is heated by the heating apparatus in the epitaxialgrowth apparatus, the silicon single crystal substrate placed on thesupport is heated. When the temperature of the silicon single crystalsubstrate reaches a desired temperature, the reaction gas is introducedinto the reaction chamber formed of the quartz glass plate from theoutside of the apparatus. The reaction gas is decomposed in the reactionchamber, and the silicon single crystal thin film is epitaxially grownon the silicon single crystal substrate.

Meanwhile, the temperatures of about 600 to 1200° C. are required forthe silicon epitaxial growth, and the difference in temperature causedby uneven heating affects the results of growth such as the growth rateand film characteristic. A variation is problematically generated in thecharacteristic of a device by the difference in temperature.Particularly, a crystal defect referred to as transposition and slip ina single crystal lattice is generated by uneven heating in a hightemperature range, and thereby the device characteristic is restrictedor the device malfunctions.

Then, in order to solve such a problem, a heat treatment apparatus asshown in, for example, FIG. 6 has been proposed. FIG. 6 illustrates aconventional heat treatment apparatus. JP 2003-347228A discloses a heattreatment apparatus 110. The heat treatment apparatus 110 is providedwith a casing 112 which forms a treatment chamber 111 for processing aplurality of wafers 101 as substrates to be treated. The casing 112 iscomposed of a cylindrical upper cup 113 a lower surface of which isopened and a cylindrical lower cup 114 an upper surface of which isopened, and has a cylindrical hollow shape. A disk-shape transmissionplate 115, which is made of quartz, is held between the upper cup 113and the lower cup 114. An exhaust port 116 is formed in a part of theside wall of the lower cup 114 so as to communicate the inside andoutside of the treatment chamber 111. An exhaust for exhausting thetreatment chamber 111 to less than atmospheric pressure is connected tothe exhaust port 116. A wafer carry-in/carry out port 117 is formed inthe other part of the side wall of the lower cup 114. A gate valve 118for opening and closing the wafer carry-in/carry out port 117 is set inthe wafer carry-in/carry out port 117. An insertion hole 119 is formedon the central line of the bottom wall of the lower cup 114. A gassupply line 121 connected to a gas supply apparatus 120 is piped on thecentral line of the insertion hole 119. A plurality of gas outlets 122are formed in the upper end of the gas supply line 121 with intervals inthe circumferential direction so as to radially jet a gas. A cylindricalrotary shaft 123 is concentrically arranged at the outside of the gassupply line 121, and is rotatably supported by a plurality of bearingapparatuses 124. The rotary shaft 123 is rotated and driven by a rotarydriving apparatus 125. A base 130 having a slightly smaller diameterthan that of the treatment chamber 111 and having a circular dish shapeis horizontally supported at the upper end of the rotary shaft 123. Thebase 130 is rotatably supported by a bearing apparatus 129 set on thebottom surface of the lower cup 114. Four rotary shafts 131 areperpendicularly built at an equal interval in the circumferentialdirection on the concentric circle on the bottom wall of the base 130.The rotary shafts 131 are respectively and rotatably supported by thebearing apparatus 135, and each of planetary gears 132 of a planetarygear mechanism is fixed to the upper end of each of the rotary shafts131. Four planetary gears 132 are engaged with a sun gear 133 fixed toan intermediate part of the gas supply line 121 so as to be freelyrolled. Electrostatic chucks 134 for electrostatically attracting andholding the wafer 101 which is a substrate to be treated arerespectively and horizontally set so as to be integrally rotated on theupper end surfaces of four planetary gears 132. A heater 140 which heatsthe wafer 101 of the treatment chamber 111 so as to transmit thetransmission plate 115 is set in the upper cup 113. The heater 140 isprovided with a plurality of heat lamps 141 in which tungsten-halogenlamps are formed in a circle line shape and a light reflector 142 fordownwardly reflecting the heat of the heat lamp 141.

BRIEF SUMMARY OF THE INVENTION

However, although the plurality of heat lamps formed in a circle lineshape has been used in the conventional heat treatment apparatus, afiner heating temperature control has been desired.

The present invention has been accomplished in view of the foregoingproblems. It is an object of the present invention to provide a heatingapparatus and semiconductor manufacturing apparatus which can carry outa fine heating temperature control easily.

In order to attain the above object, a heating apparatus of the presentinvention for heating a semiconductor substrate placed on a supportarranged in a reaction chamber of a semiconductor manufacturingapparatus, includes a plurality of heat source units, each of which hasa heat source lamp being attachable and detachable, and being attachableby changing orientations in the circumferential direction.

Herein, the orientation of the heat source lamp to the semiconductorsubstrate can be controlled for each of the heat source units by theheat source lamp being attachable and detachable, and being attachableby changing orientations in the circumferential direction, and theheating temperature distribution of the semiconductor substrate can becontrolled.

When each of the heat source units has a hexagonal outer shape in theheating apparatus of the present invention, the heat source units cancover a flat surface and heat a circular object efficiently. Also, theplurality of heat source units can be expanded on a circularsemiconductor substrate or support without bringing about a large powerloss. Furthermore, since the plurality of heat source units can bearranged adjacent to each other, a hexagonal heating element group whichapplies a desirable radiant flux pattern to the surface of thesemiconductor substrate and the surface of the support can be formed.

When each of the heat source units has a light reflector which reflectslight emitted from the heat source lamp in the heating apparatus of thepresent invention, heating using the light reflector can be carried out.Also, when the heat source lamp, which has a cylindrical shape, issubstantially arranged parallel with the light reflector, a distancebetween the light reflector and the heat source lamp is easily adjusted.

When the distance between the heat source lamp and the light reflectorcan be adjusted in the heating apparatus of the present invention, thelight reflected by the light reflector can be adjusted.

When the light reflector is covered with a gold film in the heatingapparatus of the present invention, the light reflector shows highreflectance of light with a wavelength in an infrared region emittedfrom the heat source lamp.

When the light reflector is attachable and detachable, and is attachableby changing orientations in the circumferential direction; and the lightreflector has a hexagonal outer shape in the heating apparatus of thepresent invention, the heating temperature distribution of thesemiconductor substrate can be controlled by changing only theorientation of the light reflector without changing the orientation ofthe heat source lamp. In addition, since the orientation of the heatsource lamp is not changed, labor for changing a structure for electricsupply to the heat source lamp can also be saved.

When a partition wall is arranged between the heat source units in theheating apparatus of the present invention, the diffusion of the lightcan be suppressed, and the light can be concentrated on thesemiconductor substrate.

Also, in order to attain the above object, a semiconductor manufacturingapparatus of the present invention includes a reaction chamber to whicha reaction gas is supplied; a support arranged in the reaction chamber;and a heating apparatus which heats a semiconductor substrate placed onthe support, wherein the heating apparatus includes a plurality of heatsource units, each of which has a heat source lamp being attachable anddetachable, and being attachable by changing orientations in thecircumferential direction.

Herein, since the orientation of the heat source lamp to thesemiconductor substrate can be controlled by the heat source lamp beingattachable and detachable, and being attachable by changing orientationsin the circumferential direction, the heating temperature distributionof the semiconductor substrate can be controlled.

When each of the heat source units has a hexagonal outer shape in thesemiconductor manufacturing apparatus of the present invention, the heatsource units can cover a flat surface and heat a circular objectefficiently. Also, the plurality of heat source units can be expanded ona circular semiconductor substrate or support without bringing about alarge power loss. Furthermore, since the plurality of heat source unitscan be arranged adjacent to each other, a hexagonal heating elementgroup which applies a desirable radiant flux pattern to the surface ofthe semiconductor substrate and the surface of the support can beformed.

When each of the heat source units has a light reflector which reflectslight emitted from the heat source lamp in the semiconductormanufacturing apparatus of the present invention, heating using thelight reflector can be carried out. Also, when the heat source lamp,which has a cylindrical shape, is substantially arranged parallel withthe light reflector, a distance between the light reflector and the heatsource lamp is easily adjusted.

When the light reflector is attachable and detachable, and is attachableby changing orientations in the circumferential direction; and the lightreflector has a hexagonal outer shape in the semiconductor manufacturingapparatus of the present invention, the heating temperature distributionof the semiconductor substrate can be controlled by changing only theorientation of the light reflector without changing the orientation ofthe heat source lamp. In addition, since the orientation of the heatsource lamp is not changed, labor for changing a structure for electricsupply to the heat source lamp can also be saved.

When a distance between the heat source lamp and the light reflector canbe adjusted in the semiconductor manufacturing apparatus of the presentinvention, the light reflected by the light reflector can be adjusted.

When the light reflector is covered with a gold film in thesemiconductor manufacturing apparatus of the present invention, thelight reflector shows high reflectance of light with a wavelength in aninfrared region emitted from the heat source lamp.

When a partition wall is arranged between the heat source units in thesemiconductor manufacturing apparatus of the present invention, thediffusion of the light can be suppressed, and the light can beconcentrated on the semiconductor substrate.

The heating apparatus according to the present invention can carry out afine heating temperature control easily.

The semiconductor manufacturing apparatus according to the presentinvention can carry out a fine heating temperature control easily.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view illustrating an aspect in which heat sourcelamps of a heating apparatus to which the present invention is appliedare concentrically arranged.

FIG. 2 is a schematic view illustrating a second arrangement of heatsource lamps in a heating apparatus to which the present invention isapplied.

FIG. 3 is a schematic view illustrating a third arrangement of heatsource lamps in a heating apparatus to which the present invention isapplied.

FIG. 4 is a schematic view illustrating a light reflector used for heatsource units of a heating apparatus to which the present invention isapplied.

FIG. 5 is a schematic view illustrating an epitaxial growth apparatus towhich the present invention is applied.

FIG. 6 illustrates a conventional heat treatment apparatus.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, an embodiment of the present invention will be describedwith reference to the drawings, and the embodiment is provided forunderstanding the present invention.

FIG. 1 is a schematic view illustrating an aspect in which heat sourcelamps of a heating apparatus to which the present invention is appliedare concentrically arranged. In FIG. 1, a heating apparatus 1 isprovided with a circular main body 2, and a plurality of heat sourceunits 2A which are attachable and detachable to the circular main body2, and are attachable by changing orientations in the circumferentialdirection. A partition wall 4 which is covered with a gold film and ismade of aluminum is arranged between the heat source units 2A. Each ofthe plurality of heat source units is provided with a light reflector 2Bwhich reflects light in an infrared region, is covered with a gold film,is made of aluminum and has a hexagonal outer shape, and fourcylindrical heat source lamps (halogen lamp or the like) 3 both ends ofwhich are inserted into holes formed in the light reflector 2B and whichare substantially arranged parallel with each other and in an arch form.Each of the heat source lamps 3 is substantially arranged parallel withthe light reflector 2B, and a distance between the heat source lamp 3and the light reflector 2B can be adjusted so as to lengthen and shortenthe distance. A cooling air port 1A is formed at the center of the mainbody 2.

Also, since the heat source lamps 3 arranged in each of the heat sourceunits 2A are concentrically arranged to the center of the main body 2,eleven lamp rows are formed in a radial direction in FIG. 1. The heatingtemperature distribution of the support and the heating temperaturedistribution of the semiconductor substrate can be controlled bychanging an electric current in each of the rows, and the heatingtemperature distribution of the semiconductor substrate can be madeuniform.

Although examples of the heat source lamps include a halogen lampherein, any heat source lamps may be used as long as they can heat thesemiconductor substrate. For example, an infrared lamp may be used. Aslong as the partition wall and the light reflector are made of amaterial which can reflect light in an infrared region emitted from theheat source lamp, they may not be necessarily covered with the gold filmand made of aluminum.

As long as the heat source unit has the heat source lamp beingattachable and detachable, and being attachable by changing orientationsin the circumferential direction, the outer shape of the lightreflector, i.e., the outer shape of the heat source unit may not benecessarily a hexagonal shape. For example, the outer shape may be anoctagonal shape, and the outer shapes of all the heat source units maynot be necessarily a hexagonal shape. The heat source units having thehexagonal shape and the other heat source units having the other shape,for example, the heat source units having a quadrangular shape or anoctagonal shape may be used together.

As long as the heat source unit has the heat source lamp beingattachable and detachable, and being attachable by changing orientationsin the circumferential direction, the light reflector may not benecessarily used, and for example, the outer shapes of the heat sourceunits may be a hexagonal shape without using the light reflector.

As long as the heat source lamp is attachable and detachable, and beingattachable by changing orientations in the circumferential direction,the heat source lamp may not necessarily have a cylindrical shape.

FIG. 2 is a schematic view illustrating a second arrangement of heatsource lamps in a heating apparatus to which the present invention isapplied. In FIG. 2, in each of the heat source units attached so as toextend in the right and left radial directions from the center of themain body 2, a CCD camera connecting port 5 for connecting a CCD camerafor observing the reaction chamber of the semiconductor manufacturingapparatus, a quartz temperature measuring port 6 for connecting athermometer for measuring a quartz temperature of a quartz glass platefor forming the reaction chamber, a first support temperature measuringport 7 for connecting a first thermometer for measuring the temperatureof the support, and a second support temperature measuring port 8 forconnecting a second thermometer for measuring the temperature of thesupport are formed.

Referring to the heat source units 2A attached so as to extend in sixradial directions from the center of the main body 2, the heat sourcelamps 3 are arranged along the radial direction excluding the outermostthereof.

Herein, as long as each of the heat source units has heat source lampswhich are attachable and detachable, and are attachable by changingorientations in the circumferential direction, the CCD camera connectingport, the quartz temperature measuring port, the first supporttemperature measuring port, and the second support temperature measuringport may not be necessarily formed. Also, at least one thereof may beformed.

FIG. 3 is a schematic view illustrating a third arrangement of heatsource lamps in a heating apparatus to which the present invention isapplied. In FIG. 3, all of the heat source lamps 3 of the heat sourceunits 2A are arranged in the same direction.

While not shown in FIGS. 1 to 3, an electric control system is used atthe back side of the light reflector 2B, and the electric control systemsupplies electric power to the heat source lamps of each of the heatsource units.

As is apparent from FIGS. 1 to 3, the heat source lamps 3 can be rotatedby 90 degrees in the heat source unit 2A by removing the heat sourcelamps 3, rotating the heat source lamps 3 by 90 degrees in thecircumferential direction to change the orientations of the heat sourcelamps 3, and attaching the heat source lamps 3. Thereby, the fineheating temperature control can be carried out and the heatingtemperature distribution of the semiconductor substrate can be madeuniform.

FIG. 4 is a schematic view illustrating a light reflector used for heatsource units of a heating apparatus to which the present invention isapplied. FIG. 4A is a plan view of the light reflector. FIG. 4B is asectional view taken from line A-A of FIG. 4A. FIG. 4C is a sectionalview showing a state where the arrangement of the heat source lamps ischanged.

In FIG. 4A, the hexagonal light reflector 2B is detachably attached tothe main body of the heating apparatus by fasteners 2E, and can beattached by changing orientations in the circumferential direction.Holes 2C into which the both ends of the heat source lamp 3 are insertedare formed.

As shown in FIG. 4B, four grooves 2D substantially extending in parallelwith each other and having a cross section having a semi-circular arcshape are formed in the light reflector 2B, and the heat source lamps 3are arranged along the grooves 2D.

As shown in FIG. 4C, the heat source lamps 3 are removed; theorientations thereof are changed in the circumferential direction, andthe heat source lamps 3 are arranged across the grooves 2D having thecross section having the semi-circular arc shape.

While the example in which the grooves 2D having the cross sectionhaving the semi-circular arc shape are formed in the light reflector 2Bis illustrated herein, the grooves may not be necessarily formed in thelight reflector as long as the light reflector reflects the light in theinfrared region. The light reflector may be flat, and thecross-sectional shape of the groove may not be necessarily thesemi-circular arc shape. For example, the cross-sectional shape may be aV-shape.

FIG. 5 is a schematic view illustrating an epitaxial growth apparatus towhich the present invention is applied. In FIG. 5, an epitaxial growthapparatus (one example of a semiconductor manufacturing apparatus) 9 isprovided with a reaction chamber, a disk-shaped support 15 which isarranged in the reaction chamber and supports a plurality ofsemiconductor substrates (silicon substrate) 16, and a heating apparatus1 arranged on both upper and lower sides of the support around thereaction chamber. The reaction chamber is constituted by pressing upperdome-shaped quartz glass plate 10 against lower dome-shaped quartz glassplate 10 with an upper clamp 11 made of stainless steel and a lowerclamp 12 made of stainless steel and fixing them using screws. Areaction gas inlet 13 and a reaction gas outlet 14 are formed betweenthe upper and lower dome-shaped quartz glass plates 10.

The heating apparatus 1 is a heating apparatus as shown in FIG. 1 or thelike, and a rotating member 17, which is attached to the center of thesupport 15, rotates the support 15.

When the epitaxial growth is carried out using the epitaxial growthapparatus 9, a plurality of semiconductor substrates 16 are placed onthe disk-shaped support 15 arranged in the reaction chamber. A reactiongas which contains trichlorosilane gas and hydrogen gas is introducedinto the reaction chamber from the reaction gas inlet 13. The reactiongas containing the trichlorosilane gas and the hydrogen gas flows in thevicinity of the semiconductor substrate 16, and the reaction chamber isirradiated with light from the heating apparatus arranged around thereaction chamber. Thereby, the semiconductor substrate 16 is heated tocarry out the epitaxial growth by the heat and the reaction gas.

While the example for placing the plurality of semiconductor substratesis mentioned herein, the plurality of semiconductor substrates may notbe necessarily used as long as the semiconductor substrate can be heatedby the heating apparatus, and one semiconductor substrate may be used.

While the example using the silicon substrate is mentioned, anysubstrate may be used as long as the epitaxial growth can be carriedout. For example, a gallium arsenide (GaAs) substrate and a zinctelluride (ZnTe) substrate may be used. As long as an epitaxial layercan be grown on the substrate, any material gas may be used. Forexample, when the gallium arsenide substrate is used, a gas whichcontains Ga is used, and a gas containing Te is used when the zinctelluride substrate is used.

Next, an epitaxial growth process will be described.

First, the semiconductor substrate 16 is heated to 600 to 1200° C. bythe heat source unit 2A of the heating apparatus 1, while rotating thesupport 15 which supports the semiconductor substrate 16 using therotating member 17.

Next, the epitaxial growth is carried out by introducing the reactiongas containing the trichlorosilane gas and the hydrogen gas into thereaction chamber from the reaction gas inlet 13.

While the trichlorosilane gas is introduced into the reaction chamber asthe material gas contained in the reaction gas herein, the material gasmay be any gas as long as the material gas is a gas containing siliconatoms. For example, monosilane gas, dichlorosilane gas or silicontetrachloride gas may be introduced into the reaction chamber.

As mentioned above, the example of the semiconductor manufacturingapparatus is the epitaxial growth apparatus, however, the example ofsemiconductor manufacturing apparatus is not necessarily the epitaxialgrowth apparatus, and the other example of the semiconductormanufacturing apparatus is an oxidation furnace, a CVD (chemical vapordeposition) apparatus or an RTP (rapid thermal processing) apparatus.

Thus, in the present invention, since each of the plurality of heatsource units has the heat source lamps being attachable and detachable,and being attachable by changing orientations in the circumferentialdirection, the orientations of the heat source lamps to thesemiconductor substrate can be controlled for each of the heat sourceunits, and the heating temperature distribution of the semiconductorsubstrate can be controlled. Thereby, the fine heating temperaturecontrol can be easily carried out. Accordingly, the uniform heatingtemperature distribution of the semiconductor substrate and support canbe realized.

Since each of the heat source units has the hexagonal outer shape, theheat source units can cover the flat surface and heat the circularobject efficiently. Also, the plurality of heat source units can beexpanded on the circular semiconductor substrate or support withoutbringing about a large power loss. Furthermore, since the plurality ofheat source units can be arranged adjacent to each other, the hexagonalheating element group which applies the desirable radiant flux patternto the surface of the semiconductor substrate and the surface of thesupport can be formed. Thereby, a zone control can be carried out in theareas of some semiconductor substrates. Accordingly, the presentinvention can contribute to realization of the uniform heatingtemperature distribution of the semiconductor substrate and support.

Since each of the heat source units has the light reflector whichreflects the light emitted from the heat source lamp, heating using thelight reflector can be carried out. Also, since the heat source lamp,which has the cylindrical shape, is substantially arranged parallel withthe light reflector, the distance between the light reflector and theheat source lamp is easily adjusted. Thereby, the present invention cancontribute to realization of the uniform heating temperaturedistribution of the semiconductor substrate and support.

When the distance between the heat source lamp and the light reflectorcan be adjusted, the light reflected by the light reflector can beadjusted.

Since the heat source lamps are arranged along the grooves having thecross section having the semi-circular arc shape, or the heat sourcelamps are arranged across the grooves, the heating temperaturedistribution of the semiconductor substrate can be changed. Thereby, thepresent invention can contribute to realization of the uniform heatingtemperature distribution of the semiconductor substrate and support.

Since the light reflector is covered with the gold film, the lightreflector shows high reflectance of the light with the wavelength in theinfrared region emitted from the heat source lamp.

Since the light reflector is attachable and detachable, and isattachable by changing orientations in the circumferential direction,and the light reflector has the hexagonal outer shape, the heatingtemperature distribution of the semiconductor substrate can becontrolled by changing only the orientation of the light reflectorwithout changing the orientation of the heat source lamp. In addition,since the orientation of the heat source lamp is not changed, labor forchanging a structure for electric supply to the heat source lamp canalso be saved.

Since the partition wall is arranged between the heat source units, thediffusion of the light can be suppressed, and the light can beconcentrated on the semiconductor substrate.

1. A heating apparatus for heating a semiconductor substrate placed on asupport arranged in a reaction chamber of a semiconductor manufacturingapparatus, wherein the heating apparatus includes a plurality of heatsource units, each of which has a heat source lamp being attachable anddetachable, and being attachable by changing orientations in thecircumferential direction.
 2. The heating apparatus according to claim1, wherein each of the heat source units has a hexagonal outer shape. 3.The heating apparatus according to claim 1, wherein each of the heatsource units has a light reflector which reflects light emitted from theheat source lamp, and the heat source lamp, which has a cylindricalshape, is substantially arranged parallel with the light reflector. 4.The heating apparatus according to claim 3, wherein a distance betweenthe heat source lamp and the light reflector can be adjusted.
 5. Theheating apparatus according to claim 3, wherein the light reflector iscovered with a gold film.
 6. The heating apparatus according to claim 3,wherein the light reflector is attachable and detachable, and isattachable by changing orientations in the circumferential direction,and the light reflector has a hexagonal outer shape.
 7. The heatingapparatus according to claim 1, wherein a partition wall is arrangedbetween the heat source units.
 8. A semiconductor manufacturingapparatus comprising: a reaction chamber to which a reaction gas issupplied; a support arranged in the reaction chamber; a heatingapparatus which heats a semiconductor substrate placed on the support,wherein the heating apparatus includes a plurality of heat source units,each of which has a heat source lamp being attachable and detachable,and being attachable by changing orientations in the circumferentialdirection.
 9. The heating apparatus according to claim 8, wherein eachof the heat source units has a hexagonal outer shape.
 10. Thesemiconductor manufacturing apparatus according to claim 8, wherein eachof the heat source units has a light reflector which reflects lightemitted from the heat source lamp, and the heat source lamp, which has acylindrical shape, is substantially arranged parallel with the lightreflector.
 11. The semiconductor manufacturing apparatus according toclaim 10, wherein a distance between the heat source lamp and the lightreflector can be adjusted.
 12. The semiconductor manufacturing apparatusaccording to claim 10, wherein the light reflector is covered with agold film.
 13. The semiconductor manufacturing apparatus according toclaim 10, wherein the light reflector is attachable and detachable, andis attachable by changing orientations in the circumferential direction,and the light reflector has a hexagonal outer shape.
 14. Thesemiconductor manufacturing apparatus according to claim 8, wherein apartition wall is arranged between the heat source units.